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Elenco Codici Alternativi

Componente base: FQP9N30 ID: 84328042

Famiglia: Famiglia Vitamina B12

Distinta: Nexar BOM 260119

Reference: REF-IRF740

Part Number	Livello	Produttore	Descrizione	Specs	Azioni
IRF644PBF	Reference Questo componente alternativo è valido solo per il reference specifico	Vishay	Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB	Case/Package: TO-220AB Contact Plating: Tin Continuous Drain Current (ID): 14 A Mostra tutto
Specifiche Complete Case/Package: TO-220AB Contact Plating: Tin Continuous Drain Current (ID): 14 A Current Rating: 14 A Drain to Source Breakdown Voltage: 250 V Drain to Source Resistance: 280 mΩ Drain to Source Voltage (Vdss): 250 V Element Configuration: Single Fall Time: 49 ns Gate to Source Voltage (Vgs): 20 V Height: 9.01 mm Input Capacitance: 1.3 nF Introduction Date: 1993-09-01 Lead Free: Lead Free Length: 10.41 mm Lifecycle Status: Production (Last Updated: 5 months ago) LTB Date: 2008-06-30 LTD Date: 2008-09-30 Max Operating Temperature: 150 °C Max Power Dissipation: 125 W Min Breakdown Voltage: 250 V Min Operating Temperature: -55 °C Mount: Through Hole Nominal Vgs: 4 V Number of Channels: 1 Number of Elements: 1 Number of Pins: 3 Number of Terminals: 3 Packaging: Bulk Power Dissipation: 125 W Radiation Hardening: No Rds On Max: 280 mΩ REACH SVHC: No Recovery Time: 500 ns Resistance: 280 mΩ Rise Time: 24 ns RoHS: Compliant Schedule B: 8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080 Threshold Voltage: 4 V Turn-Off Delay Time: 53 ns Turn-On Delay Time: 11 ns Voltage Rating (DC): 250 V Weight: 6.000006 g Width: 4.7 mm Chiudi

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Componente base: IRF740PBF ID: 46527100

Famiglia: Famiglia Nexar 10

Distinta: Nexar BOM 03

Reference: Ref_01

Part Number	Livello	Produttore	Descrizione	Specs	Azioni
FQP11N40C	Distinta Questo componente alternativo è valido solo all'interno della distinta specificata	onsemi	N-Channel Power MOSFET, QFET®, 400 V, 10.5 A, 530 mΩ, TO-220	Case/Package: TO-220AB China RoHS: Non-Compliant Continuous Drain Current (ID): 10.5 A Mostra tutto
Specifiche Complete Case/Package: TO-220AB China RoHS: Non-Compliant Continuous Drain Current (ID): 10.5 A Current: 10 A Current Rating: 10.5 A Drain to Source Breakdown Voltage: 400 V Drain to Source Resistance: 530 mΩ Drain to Source Voltage (Vdss): 400 V Element Configuration: Single Fall Time: 81 ns Gate to Source Voltage (Vgs): 30 V Height: 20.4 mm Input Capacitance: 1.09 nF Introduction Date: 2003-10-01 Lead Free: Lead Free Length: 10.1 mm Lifecycle Status: Production (Last Updated: 5 years ago) Manufacturer Lifecycle Status: ACTIVE (Last Updated: 5 years ago) Max Junction Temperature (Tj): 150 °C Max Operating Temperature: 150 °C Max Power Dissipation: 135 W Min Breakdown Voltage: 400 V Min Operating Temperature: -55 °C Mount: Through Hole Number of Channels: 1 Number of Elements: 1 Number of Pins: 3 Number of Terminals: 3 Packaging: Tape & Reel (TR) Power Dissipation: 135 W Rds On Max: 530 mΩ REACH SVHC: No Resistance: 530 MΩ Rise Time: 89 ns RoHS: Compliant Schedule B: 8541290080\|8541290080\|8541290080\|8541290080\|8541290080 Threshold Voltage: 4 V Turn-Off Delay Time: 81 ns Turn-On Delay Time: 14 ns Voltage: 400 V Voltage Rating (DC): 400 V Width: 4.7 mm Chiudi

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Componente base: IRF740PBF ID: 46527100

Famiglia: Famiglia Nexar 10

Distinta: Nexar BOM 03

Reference: Ref_02

Part Number	Livello	Produttore	Descrizione	Specs
IRF740APBF	Reference Questo componente alternativo è valido solo per il reference specifico	Vishay	Transistor MOSFET N-CH 400V 10A 3-Pin (3+Tab) TO-220AB	Case/Package: TO-220AB Continuous Drain Current (ID): 10 A Current Rating: 10 A Mostra tutto
Specifiche Complete Case/Package: TO-220AB Continuous Drain Current (ID): 10 A Current Rating: 10 A Drain to Source Breakdown Voltage: 400 V Drain to Source Resistance: 550 mΩ Drain to Source Voltage (Vdss): 400 V Element Configuration: Single Fall Time: 22 ns Gate to Source Voltage (Vgs): 30 V Height: 9.01 mm Input Capacitance: 1.03 nF Introduction Date: 2000-07-20 Lead Free: Lead Free Length: 10.41 mm Lifecycle Status: Production (Last Updated: 4 months ago) Max Operating Temperature: 150 °C Max Power Dissipation: 125 W Min Breakdown Voltage: 400 V Min Operating Temperature: -55 °C Mount: Through Hole Nominal Vgs: 4 V Number of Channels: 1 Number of Elements: 1 Number of Pins: 3 Number of Terminals: 3 Packaging: Bulk Power Dissipation: 125 W Radiation Hardening: No Rds On Max: 550 mΩ REACH SVHC: No Resistance: 550 mΩ Rise Time: 35 ns RoHS: Compliant Schedule B: 8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080 Threshold Voltage: 4 V Turn-Off Delay Time: 24 ns Turn-On Delay Time: 10 ns Voltage Rating (DC): 400 V Weight: 6.000006 g Width: 4.7 mm Chiudi
FQP9N30	Reference Questo componente alternativo è valido solo per il reference specifico	onsemi	Power MOSFET, N-Channel, QFET®, 300 V, 9 A, 450 mΩ, TO-220	N/A
Specifiche Complete Chiudi

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Componente base: MMBF4393LT1G ID: 32272

Famiglia: -

Distinta: Nexar BOM 11

Reference: REF-MMBF

Part Number	Livello	Produttore	Descrizione	Specs	Azioni
BFT46,215	Famiglia Questo componente alternativo è valido solo all'interno della famiglia specificata	NXP Semiconductors	Jfet Transistor, Junction Field Effect, Jfet, 200 A, 1.5 Ma, 2 V, Sot-23 Rohs Compliant: Yes	Breakdown Voltage: 25 V Case/Package: SOT-23-3 China RoHS: Compliant Mostra tutto
Specifiche Complete Breakdown Voltage: 25 V Case/Package: SOT-23-3 China RoHS: Compliant Contact Plating: Tin Continuous Drain Current (ID): 10 mA Drain to Source Breakdown Voltage: 25 V Drain to Source Voltage (Vdss): 25 V Element Configuration: Single Gate to Source Voltage (Vgs): -25 V Height: 1 mm Input Capacitance: 5 pF Introduction Date: 1993-07-01 Lead Free: Lead Free Length: 3 mm Lifecycle Status: Obsolete (Last Updated: 4 months ago) LTB Date: 2018-07-31 LTD Date: 2019-07-31 Max Operating Temperature: 150 °C Max Power Dissipation: 250 mW Min Breakdown Voltage: 25 V Min Operating Temperature: -65 °C Mount: Surface Mount Number of Elements: 1 Number of Pins: 3 Number of Terminals: 3 Output Power: 250 mW Radiation Hardening: No REACH SVHC: Yes RoHS: Compliant Weight: 200.998119 mg Width: 1.4 mm Chiudi

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Componente base: ARF463AP1G ID: 100965105

Famiglia: famiglia 300

Distinta: Nexar BOM 300

Reference: ref-ARF463AP1G

Part Number	Livello	Produttore	Descrizione	Specs	Azioni
IRFPC50APBF	Globale Questo componente alternativo può essere utilizzato in sostituzione in qualsiasi contesto	Vishay	Single N-Channel 600 V 0.58 Ohms Flange Mount Power Mosfet - TO-247AC	Case/Package: TO-247-3 Continuous Drain Current (ID): 11 A Current Rating: 11 A Mostra tutto
Specifiche Complete Case/Package: TO-247-3 Continuous Drain Current (ID): 11 A Current Rating: 11 A Drain to Source Breakdown Voltage: 600 V Drain to Source Resistance: 580 mΩ Drain to Source Voltage (Vdss): 600 V Element Configuration: Single Fall Time: 29 ns Gate to Source Voltage (Vgs): 30 V Height: 20.7 mm Input Capacitance: 2.1 nF Introduction Date: 1999-06-29 Lead Free: Lead Free Length: 15.87 mm Lifecycle Status: Obsolete (Last Updated: 4 months ago) Max Operating Temperature: 150 °C Max Power Dissipation: 180 W Min Breakdown Voltage: 600 V Min Operating Temperature: -55 °C Mount: Through Hole Nominal Vgs: 4 V Number of Channels: 1 Number of Elements: 1 Number of Pins: 3 Number of Terminals: 3 Packaging: Bulk Power Dissipation: 180 W Radiation Hardening: No Rds On Max: 580 mΩ REACH SVHC: Yes Resistance: 580 mΩ Rise Time: 40 ns RoHS: Compliant Schedule B: 8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080 Threshold Voltage: 4 V Turn-Off Delay Time: 33 ns Turn-On Delay Time: 15 ns Voltage Rating (DC): 600 V Weight: 38.000013 g Width: 5.31 mm Chiudi

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Componente base: ARF463AP1G ID: 100965105

Famiglia: famiglia 300

Distinta: Nexar BOM 300

Reference: ref-ARF463AP1G

Part Number	Livello	Produttore	Descrizione	Specs	Azioni
STY60NM60	Famiglia Questo componente alternativo è valido solo all'interno della famiglia specificata	STMicroelectronics	N-CHANNEL 600V - 0.050 Ohm - 60A Max247 Zener-Protected MDmesh(TM)Power MOSFET	Case/Package: TO-247-3 China RoHS: Non-Compliant Continuous Drain Current (ID): 60 A Mostra tutto
Specifiche Complete Case/Package: TO-247-3 China RoHS: Non-Compliant Continuous Drain Current (ID): 60 A Current Rating: 60 A Drain to Source Breakdown Voltage: 600 V Drain to Source Resistance: 55 mΩ Drain to Source Voltage (Vdss): 600 V Element Configuration: Single Fall Time: 76 ns Gate to Source Voltage (Vgs): 30 V Height: 20.3 mm Input Capacitance: 7.3 nF Introduction Date: 1980-01-04 Lead Free: Lead Free Length: 5.9 mm Lifecycle Status: Production (Last Updated: 4 months ago) Max Operating Temperature: 150 °C Max Power Dissipation: 600 W Min Breakdown Voltage: 600 V Min Operating Temperature: -65 °C Mount: Through Hole Number of Elements: 1 Number of Terminals: 3 Power Dissipation: 560 W Radiation Hardening: No Rds On Max: 55 mΩ REACH SVHC: No Rise Time: 95 ns RoHS: Compliant Schedule B: 8541290080, 8541290080\|8541290080, 8541290080\|8541290080\|8541290080, 8541290080\|8541290080\|8541290080\|8541290080 Threshold Voltage: 4 V Turn-Off Delay Time: 55 ns Turn-On Delay Time: 55 ns Voltage Rating (DC): 600 V Width: 5.3 mm Chiudi

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Elenco Codici Alternativi

Componente base: FQP9N30 ID: 84328042

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Componente base: IRF740PBF ID: 46527100

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Componente base: IRF740PBF ID: 46527100

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Componente base: MMBF4393LT1G ID: 32272

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Componente base: ARF463AP1G ID: 100965105

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Componente base: ARF463AP1G ID: 100965105

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